STMICROELECTRONICS STS5DNF20V 双路场效应管, MOSFET, 双N沟道, 2.5 A, 20 V, 30 mohm, 4.5 V, 2.7 V
The is a dual N-channel STripFET™ II Power MOSFET for switching applications. This Power MOSFET has been developed using STMicroelectronics" unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-to-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
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- Standard outline for easy automated surface-mount assembly
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- Ultra low threshold gate drive
额定电压DC 20.0 V
额定电流 5.00 A
额定功率 1.6 W
针脚数 8
漏源极电阻 30 mΩ
极性 Dual N-Channel
耗散功率 2 W
阈值电压 2.7 V
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 5.00 A
上升时间 33 ns
输入电容Ciss 460pF @25VVds
额定功率Max 2 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.65 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STS5DNF20V ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STS2DNF30L 意法半导体 | 类似代替 | STS5DNF20V和STS2DNF30L的区别 |
FDS9926A 飞兆/仙童 | 功能相似 | STS5DNF20V和FDS9926A的区别 |
NTMD6N02R2G 安森美 | 功能相似 | STS5DNF20V和NTMD6N02R2G的区别 |