STMICROELECTRONICS STD2HNK60Z-1 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 3.75 V
The is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of ST"s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
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- Gate charge minimized
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- 100% avalanche tested
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- Extremely high dv/dt capability
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- ESD improved capability
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- New high voltage benchmark
针脚数 3
漏源极电阻 4.4 Ω
极性 N-Channel
耗散功率 45 W
阈值电压 3.75 V
漏源极电压Vds 600 V
连续漏极电流Ids 2.00 A
上升时间 30 ns
输入电容Ciss 280pF @25VVds
额定功率Max 45 W
下降时间 50 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
封装 TO-251-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 工业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD2HNK60Z-1 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP55NF06 意法半导体 | 功能相似 | STD2HNK60Z-1和STP55NF06的区别 |
STW20NK50Z 意法半导体 | 功能相似 | STD2HNK60Z-1和STW20NK50Z的区别 |
STP5NK100Z 意法半导体 | 功能相似 | STD2HNK60Z-1和STP5NK100Z的区别 |