STD1NK60T4

STMICROELECTRONICS  STD1NK60T4  功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V

N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics

### MOSFET ，STMicroelectronics

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STD1NK60T4, 1 A, Vds=600 V, 3引脚 DPAK TO-252封装

立创商城:
N沟道 600V 1A

得捷:
MOSFET N-CH 600V 1A DPAK

贸泽:
MOSFET N-Ch 600 Volt 1.0Amp Zener SuperMESH

e络盟:
功率场效应管, MOSFET, N沟道, 600 V, 500 mA, 8 ohm, TO-252 DPAK, 表面安装

艾睿:
Make an effective common source amplifier using this STD1NK60T4 power MOSFET from STMicroelectronics. Its maximum power dissipation is 30000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology.

安富利:
Trans MOSFET N-CH 600V 1A 3-Pin2+Tab DPAK T/R

富昌:
N-沟道 600 V 8.5 Ω 10 nC 表面贴装 SuperMESH™ MosFet - TO-252-3

Chip1Stop:
Trans MOSFET N-CH 600V 1A 3-Pin2+Tab DPAK T/R

Verical:
Trans MOSFET N-CH 600V 1A 3-Pin2+Tab DPAK T/R

Newark:
# STMICROELECTRONICS  STD1NK60T4  Power MOSFET, N Channel, 500 mA, 600 V, 8 ohm, 10 V, 3 V

儒卓力:
**N-CH 600V 1A 8500mOhm TO252-3 **

力源芯城:
600V,8Ω,1A,N沟道功率MOSFET

DeviceMart:
MOSFET N-CH 600V 1A DPAK

Win Source:
MOSFET N-CH 600V 1A DPAK