STMICROELECTRONICS STD2N62K3 功率场效应管, MOSFET, N沟道, 2.2 A, 620 V, 3 ohm, 10 V, 3.75 V
N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 620V 2.2A DPAK
立创商城:
N沟道 620V 2.2A
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 N沟道 MOSFET 晶体管 STD2N62K3, 2.2 A, Vds=620 V, 3引脚
贸泽:
MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH 3
e络盟:
STMICROELECTRONICS STD2N62K3 功率场效应管, MOSFET, N沟道, 2.2 A, 620 V, 3 ohm, 10 V, 3.75 V
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STD2N62K3 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 45000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh 3 technology.
安富利:
Trans MOSFET N-CH 620V 2.2A 3-Pin2+Tab DPAK T/R
富昌:
N-Channel 620 V 3.6 Ω Surface Mount SuperMesh III Power MosFet - TO-252-3
TME:
Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK
Verical:
Trans MOSFET N-CH 620V 2.2A 3-Pin2+Tab DPAK T/R
力源芯城:
620V,3Ω,2.2A,N沟道功率MOSFET
Win Source:
MOSFET N-CH 620V 2.2A DPAK
通道数 1
针脚数 3
漏源极电阻 3 Ω
极性 N-Channel
耗散功率 45 W
阈值电压 3.75 V
漏源极电压Vds 620 V
漏源击穿电压 620 V
连续漏极电流Ids 2.2A
上升时间 4.4 ns
输入电容Ciss 340pF @50VVds
额定功率Max 45 W
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 45W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD2N62K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB2N62K3 意法半导体 | 功能相似 | STD2N62K3和STB2N62K3的区别 |