STMICROELECTRONICS STD30NF03LT4 晶体管, MOSFET, N沟道, 15 A, 30 V, 0.02 ohm, 4.5 V, 1.7 V
表面贴装型 N 通道 30A(Tc) 50W(Tc) DPAK
得捷:
MOSFET N-CH 30V 30A DPAK
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STD30NF03LT4 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 50000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet ii technology. This MOSFET transistor has an operating temperature range of -65 °C to 175 °C.
安富利:
Trans MOSFET N-CH 30V 30A 3-Pin2+Tab TO-252 T/R
富昌:
STD30NF03L Series N-Channel 30 V 0.025 Ω STripFET II Power MosFet - TO-252-3
TME:
Transistor: N-MOSFET; unipolar; 30V; 30A; 50W; DPAK
Verical:
Trans MOSFET N-CH 30V 30A Automotive 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS STD30NF03LT4 MOSFET Transistor, N Channel, 15 A, 30 V, 0.02 ohm, 4.5 V, 1.7 V
儒卓力:
**N-CH 30V 30A 25mOhm TO252-3 **
力源芯城:
30V,0.02Ω,30A,N沟道功率MOSFET
DeviceMart:
MOSFET N-CH 30V 30A DPAK
Win Source:
MOSFET N-CH 30V 30A DPAK
额定电压DC 30.0 V
额定电流 30.0 A
额定功率 50 W
通道数 1
针脚数 3
漏源极电阻 0.02 Ω
极性 N-Channel
耗散功率 50 W
阈值电压 1.7 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 30.0 A
上升时间 205 ns
输入电容Ciss 830pF @25VVds
额定功率Max 50 W
下降时间 240 ns
工作温度Max 175 ℃
工作温度Min -65 ℃
耗散功率Max 50W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -65℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, 工业, Industrial, Automotive, 车用
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD30NF03LT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FDD6690A 飞兆/仙童 | 功能相似 | STD30NF03LT4和FDD6690A的区别 |
IRFR3303TRPBF 国际整流器 | 功能相似 | STD30NF03LT4和IRFR3303TRPBF的区别 |
IRLR3303PBF 国际整流器 | 功能相似 | STD30NF03LT4和IRLR3303PBF的区别 |