STB6N65M2

STMICROELECTRONICS  STB6N65M2  功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V

表面贴装型 N 通道 650 V 4A（Tc） 60W（Tc） D2PAK

得捷:
MOSFET N-CH 650V 4A D2PAK

贸泽:
MOSFET POWER MOSFET

e络盟:
晶体管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V

艾睿:
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STB6N65M2 power MOSFET. Its maximum power dissipation is 60000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh m2 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 650V 4A 3-Pin D2PAK T/R

Verical:
Trans MOSFET N-CH 650V 4A 3-Pin2+Tab D2PAK T/R

Newark:
# STMICROELECTRONICS  STB6N65M2  Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V

儒卓力:
**N-CH 650V 4A 1350mOhm TO263 **