STMICROELECTRONICS STB6NK60ZT4 功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics
得捷:
MOSFET N-CH 600V 6A D2PAK
立创商城:
STB6NK60ZT4
欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STB6NK60ZT4, 6 A, Vds=600 V, 3引脚 D2PAK TO-263封装
e络盟:
功率场效应管, MOSFET, N沟道, 600 V, 3 A, 1 ohm, TO-263 D2PAK, 表面安装
艾睿:
Increase the current or voltage in your circuit with this STB6NK60ZT4 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes supermesh technology.
安富利:
Trans MOSFET N-CH 600V 6A 3-Pin2+Tab D2PAK T/R
Chip1Stop:
Trans MOSFET N-CH 600V 6A 3-Pin2+Tab D2PAK T/R
TME:
Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; D2PAK
Verical:
Trans MOSFET N-CH 600V 6A 3-Pin2+Tab D2PAK T/R
Newark:
# STMICROELECTRONICS STB6NK60ZT4 Power MOSFET, N Channel, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
儒卓力:
**N-CH 600V 6A 1200mOhm TO263-3 **
Win Source:
MOSFET N-CH 600V 6A D2PAK
额定电压DC 600 V
额定电流 6.00 A
针脚数 3
漏源极电阻 1 Ω
极性 N-Channel
耗散功率 110 W
阈值电压 3.75 V
输入电容 905 pF
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 6.00 A
上升时间 14 ns
输入电容Ciss 905pF @25VVds
额定功率Max 110 W
下降时间 19 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 110W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.75 mm
宽度 10.4 mm
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 Industrial, 工业, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STB6NK60ZT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
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