STMICROELECTRONICS STB8NM60T4 功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.9 ohm, 10 V, 4 V
The is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company"s PowerMESH™ horizontal layout. The resulting product has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The adoption of the company"s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition"s products.
- .
- 100% Avalanche tested
- .
- High dV/dt and avalanche capabilities
- .
- Low gate input resistance
额定电压DC 650 V
额定电流 5.00 A
针脚数 3
漏源极电阻 0.9 Ω
极性 N-Channel
耗散功率 100 W
阈值电压 4 V
输入电容 400 pF
栅电荷 18.0 nC
漏源极电压Vds 650 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 5.00 A
上升时间 10 ns
输入电容Ciss 400pF @25VVds
额定功率Max 100 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 100W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 工业, Power Management, 电源管理, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STB8NM60T4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB8NM60D 意法半导体 | 类似代替 | STB8NM60T4和STB8NM60D的区别 |
STP8NM60D 意法半导体 | 功能相似 | STB8NM60T4和STP8NM60D的区别 |