S29GL512P12FFIV10

S29GL512P12FFIV10图片1
S29GL512P12FFIV10图片2
S29GL512P12FFIV10图片3
S29GL512P12FFIV10图片4
S29GL512P12FFIV10概述

SPANSION  S29GL512P12FFIV10  芯片, 闪存, 或非, 512MB, FBGA-64

1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

General Description

The S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

■ Single 3V read/program/erase 2.7-3.6 V

■ Enhanced VersatileI/O™ control

   – All input levels address, control, and DQ input levels and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC

■ 90 nm MirrorBit process technology

■ 8-word/16-byte page read buffer

■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates

■ Secured Silicon Sector region

   – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number

   – Can be programmed and locked at the factory or by the customer

■ Uniform 64 Kword/128 Kbyte Sector Architecture

   – S29GL01GP: One thousand twenty-four sectors

   – S29GL512P: Five hundred twelve sectors

   – S29GL256P: Two hundred fifty-six sectors

   – S29GL128P: One hundred twenty-eight sectors

■ 100,000 erase cycles per sector typical

■ 20-year data retention typical

■ Offered Packages

   – 56-pin TSOP

   – 64-ball Fortified BGA

■ Suspend and Resume commands for Program and Erase operations

■ Write operation status bits indicate program and erase operation completion

■ Unlock Bypass Program command to reduce programming time

■ Support for CFI Common Flash Interface

■ Persistent and Password methods of Advanced Sector Protection

■ WP#/ACC input

   – Accelerates programming time when VHH is applied for greater throughput during system production

   – Protects first or last sector regardless of sector protection settings

■ Hardware reset input RESET# resets device

■ Ready/Busy# output RY/BY# detects program or erase cycle completion

S29GL512P12FFIV10中文资料参数规格
技术参数

电源电压DC 2.70V min

供电电流 110 mA

存取时间 120 ns

内存容量 64000000 B

存取时间Max 120 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 2.7V ~ 3.6V

电源电压Max 3.6 V

电源电压Min 2.7 V

封装参数

安装方式 Surface Mount

引脚数 64

封装 FBGA-64

外形尺寸

封装 FBGA-64

物理参数

工作温度 -40℃ ~ 85℃ TA

其他

产品生命周期 Unknown

包装方式 Tray

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

数据手册

在线购买S29GL512P12FFIV10
型号: S29GL512P12FFIV10
制造商: Spansion 飞索半导体
描述:SPANSION  S29GL512P12FFIV10  芯片, 闪存, 或非, 512MB, FBGA-64
替代型号S29GL512P12FFIV10
型号/品牌 代替类型 替代型号对比

S29GL512P12FFIV10

Spansion 飞索半导体

当前型号

当前型号

S29GL512P11FFI010

飞索半导体

类似代替

S29GL512P12FFIV10和S29GL512P11FFI010的区别

锐单商城 - 一站式电子元器件采购平台