S29GL01GS11TFI010

SPANSION  S29GL01GS11TFI010  闪存, 1 Gbit, 64M x 16位, 并行, TSOP, 56 引脚

The is a 1GB GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory fabricated on 65nm process technology. This device offers a fast page access time as fast as 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.

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Highest address sector protected

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Versatile I/O™ - Wide I/O voltage range of 1.65V to VCC

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Asynchronous 32-byte page read

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Suspend and resume commands for program and erase operations

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Status register, data polling and ready/busy pin methods to determine device status

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Advanced sector protection - Volatile and non-volatile protection methods for each sector

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Common flash interface CFI parameter table

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100000 Erase cycles for any sector typical

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20 Years data retention typical