SPANSION S29GL01GP11FFIR20 闪存, 或非, 1 Gbit, 并行, BGA, 64 引脚
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
General Description
The S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Distinctive Characteristics
■ Single 3V read/program/erase 2.7-3.6 V
■ Enhanced VersatileI/O™ control
– All input levels address, control, and DQ input levels and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
■ 90 nm MirrorBit process technology
■ 8-word/16-byte page read buffer
■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
■ Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the customer
■ Uniform 64 Kword/128 Kbyte Sector Architecture
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
■ 100,000 erase cycles per sector typical
■ 20-year data retention typical
■ Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
■ Suspend and Resume commands for Program and Erase operations
■ Write operation status bits indicate program and erase operation completion
■ Unlock Bypass Program command to reduce programming time
■ Support for CFI Common Flash Interface
■ Persistent and Password methods of Advanced Sector Protection
■ WP#/ACC input
– Accelerates programming time when VHH is applied for greater throughput during system production
– Protects first or last sector regardless of sector protection settings
■ Hardware reset input RESET# resets device
■ Ready/Busy# output RY/BY# detects program or erase cycle completion
电源电压DC 3.00V min
供电电流 110 mA
针脚数 64
存取时间 110 ns
内存容量 125000000 B
存取时间Max 110 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 2.7V ~ 3.6V
电源电压Max 3.6 V
电源电压Min 3 V
安装方式 Surface Mount
引脚数 64
封装 BGA-64
封装 BGA-64
产品生命周期 Unknown
包装方式 Tray
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 3A991.b.1.a
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
S29GL01GP11FFIR20 Spansion 飞索半导体 | 当前型号 | 当前型号 |
S29GL01GP11FAIR10 飞索半导体 | 功能相似 | S29GL01GP11FFIR20和S29GL01GP11FAIR10的区别 |
S29GL01GP11FFCR10 飞索半导体 | 功能相似 | S29GL01GP11FFIR20和S29GL01GP11FFCR10的区别 |