STGP10NC60HD 系列 N沟道 600 V 10 A 极快 IGBT 法兰安装 - TO-220-3
You can use this IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 65000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
额定电压DC 600 V
额定电流 20.0 A
极性 N-Channel
耗散功率 56 W
上升时间 5.00 ns
击穿电压集电极-发射极 600 V
反向恢复时间 22 ns
额定功率Max 65 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 65000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 9.15 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STGP10NC60HD ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IRGB10B60KDPBF 国际整流器 | 功能相似 | STGP10NC60HD和IRGB10B60KDPBF的区别 |
IRGB4064DPBF 国际整流器 | 功能相似 | STGP10NC60HD和IRGB4064DPBF的区别 |