SI7456DP-TI-GE3概述
VISHAY SI7456DP-TI-GE3 晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.021 ohm, 10 V, 4 V
The is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.
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- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
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- PWM optimized
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- Fast switching
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- 100% Rg tested
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- Halogen-free
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- -55 to 150°C Operating temperature range
SI7456DP-TI-GE3中文资料参数规格
技术参数
针脚数 8
漏源极电阻 0.021 Ω
极性 N-Channel
耗散功率 1.9 W
阈值电压 4 V
漏源极电压Vds 100 V
连续漏极电流Ids 5.70 A
工作温度Max 150 ℃
封装参数
引脚数 8
封装 PowerPAK SO
外形尺寸
封装 PowerPAK SO
其他
包装方式 Cut Tape CT
制造应用 Automotive, Power Management, Industrial, Communications & Networking
符合标准
RoHS标准 RoHS Compliant
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
在线购买SI7456DP-TI-GE3
型号： SI7456DP-TI-GE3
制造商：
Vishay Semiconductor
威世
描述：VISHAY SI7456DP-TI-GE3 晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.021 ohm, 10 V, 4 V