S29GL128P11FFI020

S29GL128P11FFI020图片1
S29GL128P11FFI020图片2
S29GL128P11FFI020图片3
S29GL128P11FFI020图片4
S29GL128P11FFI020图片5
S29GL128P11FFI020概述

Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64Pin Fortified BGA Tray

1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

General Description

The S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

■ Single 3V read/program/erase 2.7-3.6 V

■ Enhanced VersatileI/O™ control

   – All input levels address, control, and DQ input levels and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC

■ 90 nm MirrorBit process technology

■ 8-word/16-byte page read buffer

■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates

■ Secured Silicon Sector region

   – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number

   – Can be programmed and locked at the factory or by the customer

■ Uniform 64 Kword/128 Kbyte Sector Architecture

   – S29GL01GP: One thousand twenty-four sectors

   – S29GL512P: Five hundred twelve sectors

   – S29GL256P: Two hundred fifty-six sectors

   – S29GL128P: One hundred twenty-eight sectors

■ 100,000 erase cycles per sector typical

■ 20-year data retention typical

■ Offered Packages

   – 56-pin TSOP

   – 64-ball Fortified BGA

■ Suspend and Resume commands for Program and Erase operations

■ Write operation status bits indicate program and erase operation completion

■ Unlock Bypass Program command to reduce programming time

■ Support for CFI Common Flash Interface

■ Persistent and Password methods of Advanced Sector Protection

■ WP#/ACC input

   – Accelerates programming time when VHH is applied for greater throughput during system production

   – Protects first or last sector regardless of sector protection settings

■ Hardware reset input RESET# resets device

■ Ready/Busy# output RY/BY# detects program or erase cycle completion

S29GL128P11FFI020中文资料参数规格
技术参数

电源电压DC 2.70V min

供电电流 110 mA

内存容量 16000000 B

存取时间Max 110 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

封装参数

安装方式 Surface Mount

引脚数 64

封装 BGA

外形尺寸

封装 BGA

其他

产品生命周期 Unknown

包装方式 Tray

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

香港进出口证 NLR

数据手册

在线购买S29GL128P11FFI020
型号: S29GL128P11FFI020
制造商: Spansion 飞索半导体
描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64Pin Fortified BGA Tray

锐单商城 - 一站式电子元器件采购平台