N-沟道 440 V 20 A 表面贴装 内部钳位 PowerMESH IGBT - D2PAK
IGBT - 440 V 20 A 150 W 表面贴装型 D2PAK
得捷:
IGBT 440V 20A 150W D2PAK
贸泽:
IGBT Transistors N-Ch Clamped 20 Amp
艾睿:
This STGB10NB40LZT4 IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 380 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
安富利:
Trans IGBT Chip N-CH 380V 20A 3-Pin2+Tab D2PAK T/R
Chip1Stop:
Trans IGBT Chip N-CH 380V 20A Automotive 3-Pin2+Tab D2PAK T/R
Verical:
Trans IGBT Chip N-CH 380V 20A 150000mW Automotive 3-Pin2+Tab D2PAK T/R
DeviceMart:
IGBT N-CHAN 20A CLAMP D2PAK
额定电压DC 18.0 V
额定电流 20.0 A
耗散功率 150 W
输入电容 1300 pF
上升时间 270 ns
击穿电压集电极-发射极 440 V
热阻 62.5 ℃/W
额定功率Max 150 W
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 150000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99