600V,20A,高速沟槽型场截止IGBT
IGBT 分立，STMicroelectronics
### IGBT 分立件和模块，STMicroelectronics
绝缘栅级双极性或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
得捷:
IGBT 600V 40A 167W TO247
欧时:
STMicroelectronics STGW20H60DF N沟道 IGBT, 40 A, Vce=600 V, 3引脚 TO-247封装
立创商城:
STGW20H60DF
贸泽:
IGBT 晶体管 600V 20A Hi Spd TrenchGate FieldStop
艾睿:
This STGW20H60DF IGBT transistor from STMicroelectronics will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 167000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
安富利:
Trans IGBT Chip N-CH 600V 40A 3-Pin TO-247 Tube
Chip1Stop:
Trans IGBT Chip N-CH 600V 40A 3-Pin3+Tab TO-247 Tube
Verical:
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin3+Tab TO-247 Tube
力源芯城:
600V,20A,高速沟槽型场截止IGBT
Win Source:
IGBT 600V 40A 167W TO247