STGB20NB41LZT4

STGB20NB41LZ 系列 N-沟道 442 V 20 A 内部钳位 PowerMESH IGBT-D2PAK

IGBT - 442 V 40 A 200 W 表面贴装型 D2PAK

得捷:
IGBT 442V 40A 200W D2PAK

贸泽:
IGBT 晶体管 N-Ch Clamped 20 Amp

e络盟:
单晶体管, IGBT, 40 A, 1.3 V, 200 W, 412 V, TO-263 D2PAK, 3 引脚

艾睿:
This STGB20NB41LZT4 IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 382 V. Its maximum power dissipation is 200000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 382V 40A 3-Pin2+Tab D2PAK T/R

富昌:
STGB20NB41LZ 系列 N-沟道 442 V 20 A 内部钳位 PowerMESH IGBT-D2PAK

Chip1Stop:
Trans IGBT Chip N-CH 382V 40A Automotive 3-Pin2+Tab D2PAK T/R

Verical:
Trans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin2+Tab D2PAK T/R

Newark:
# STMICROELECTRONICS  STGB20NB41LZT4  IGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3

力源芯城:
20A,410V,IGBT

DeviceMart:
IGBT N-CHAN 40A CLAMP D2PAK

Win Source:
IGBT 442V 40A 200W D2PAK