N沟道14A - 600V TO- 220 / DPAK非常快的PowerMESH IGBT N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT
The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 80000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
额定电压DC 600 V
额定电流 14.0 A
极性 N-Channel
耗散功率 80 W
上升时间 27 ns
击穿电压集电极-发射极 600 V
额定功率Max 80 W
下降时间 60 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
工作结温Max 150 ℃
耗散功率Max 80000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99