STGP7NC60H

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STGP7NC60H概述

N沟道14A - 600V TO- 220 / DPAK非常快的PowerMESH IGBT N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT

The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 80000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

STGP7NC60H中文资料参数规格
技术参数

额定电压DC 600 V

额定电流 14.0 A

极性 N-Channel

耗散功率 80 W

上升时间 27 ns

击穿电压集电极-发射极 600 V

额定功率Max 80 W

下降时间 60 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

工作结温Max 150 ℃

耗散功率Max 80000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买STGP7NC60H
型号: STGP7NC60H
描述:N沟道14A - 600V TO- 220 / DPAK非常快的PowerMESH IGBT N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT

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