STGF20NB60S

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STGF20NB60S概述

N沟道13A - 600V TO- 220FP的PowerMESH IGBT N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT

IGBT - 600 V 24 A 40 W 通孔 TO-220FP


得捷:
IGBT 600V 24A 40W TO220FP


艾睿:
The STGF20NB60S IGBT transistor from STMicroelectronics will work effectively even with higher currents. Its maximum power dissipation is 40000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.


安富利:
Trans IGBT Chip N-CH 600V 24A 3-Pin3+Tab TO-220FP Tube


Chip1Stop:
Trans IGBT Chip N-CH 600V 24A 3-Pin3+Tab TO-220FP Tube


Verical:
Trans IGBT Chip N-CH 600V 24A 40000mW 3-Pin3+Tab TO-220FP Tube


DeviceMart:
IGBT N-CH 600V 13A TO-220FP


STGF20NB60S中文资料参数规格
技术参数

耗散功率 40000 mW

击穿电压集电极-发射极 600 V

额定功率Max 40 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 40000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买STGF20NB60S
型号: STGF20NB60S
描述:N沟道13A - 600V TO- 220FP的PowerMESH IGBT N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT

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