STGWA19NC60HD

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STGWA19NC60HD概述

STGWA19NC60HD 系列 600 V 52 A 极快速 IGBT 带超快恢复二极管 - TO-247

The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 208000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

STGWA19NC60HD中文资料参数规格
技术参数

耗散功率 208000 mW

击穿电压集电极-发射极 600 V

反向恢复时间 31 ns

额定功率Max 208 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 208000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买STGWA19NC60HD
型号: STGWA19NC60HD
描述:STGWA19NC60HD 系列 600 V 52 A 极快速 IGBT 带超快恢复二极管 - TO-247

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