STGP35N35LZ

IGBT 晶体管 EAS 450mJ 345V PowerMESH IGBT

Minimize the current at your gate with the IGBT transistor from STMicroelectronics. Its maximum power dissipation is 176000 mW. It has a maximum collector emitter voltage of 320 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.