STGW30H60DF

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STGW30H60DF概述

Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin3+Tab TO-247 Tube

This powerful and secure IGBT transistor from STMicroelectronics will make sure your circuit works properly. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.

STGW30H60DF中文资料参数规格
技术参数

耗散功率 260000 mW

击穿电压集电极-发射极 600 V

反向恢复时间 110 ns

额定功率Max 260 W

工作温度Max 175 ℃

工作温度Min -40 ℃

耗散功率Max 260000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

封装 TO-247-3

物理参数

工作温度 -40℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买STGW30H60DF
型号: STGW30H60DF
描述:Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin3+Tab TO-247 Tube

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