STGW28IH125DF

Trans IGBT Chip N-CH 1250V 60A 375000mW 3Pin3+Tab TO-247 Tube

You won"t need to worry about any lagging in your circuit with this IGBT transistor from STMicroelectronics. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 1250 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.