STGW35HF60WD 系列 600 V 30 A 法兰安装 超快 IGBT - TO-247
IGBT - 600 V 60 A 200 W 通孔 TO-247-3
得捷:
IGBT 600V 60A 200W TO-247
贸泽:
IGBT 晶体管 35 A 600 V Ultra fast IGBT
艾睿:
This STGW35HF60WDI IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 200000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans IGBT Chip N-CH 600V 60A 3-Pin3+Tab TO-247 Tube
富昌:
STGW35HF60WD 系列 600 V 30 A 超快速 IGBT 法兰安装 - TO-247
Chip1Stop:
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin3+Tab TO-247 Tube
DeviceMart:
IGBT 600V 60A 200W TO-247
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STGW35HF60WDI ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IXGH32N60BU1 IXYS Semiconductor | 功能相似 | STGW35HF60WDI和IXGH32N60BU1的区别 |
IXGH30N60BD1 IXYS Semiconductor | 功能相似 | STGW35HF60WDI和IXGH30N60BD1的区别 |
IXGH32N60CD1 IXYS Semiconductor | 功能相似 | STGW35HF60WDI和IXGH32N60CD1的区别 |