STGP19NC60H

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STGP19NC60H概述

19 A - 600 V - 非常快速的IGBT 19 A - 600 V - very fast IGBT

Use the IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 130000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

STGP19NC60H中文资料参数规格
技术参数

耗散功率 130000 mW

击穿电压集电极-发射极 600 V

额定功率Max 130 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 130000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

高度 9.15 mm

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买STGP19NC60H
型号: STGP19NC60H
描述:19 A - 600 V - 非常快速的IGBT 19 A - 600 V - very fast IGBT

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