STGW15M120DF3

STMICROELECTRONICS  STGW15M120DF3  单晶体管, IGBT, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 引脚

IGBT 沟槽型场截止 1200 V 30 A 259 W 通孔 TO-247

得捷:
IGBT 1200V 30A 259W

贸泽:
IGBT Transistors IGBT & Power Bipolar

e络盟:
单晶体管, IGBT, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 引脚

艾睿:
The STGW15M120DF3 IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 259000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration. This device is made with field stop|trench technology.

安富利:
Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube

Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin3+Tab TO-247 Tube

Verical:
Trans IGBT Chip N=-CH 1200V 30A 259000mW 3-Pin3+Tab TO-247 Tube

Newark:
# STMICROELECTRONICS  STGW15M120DF3  IGBT Single Transistor, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 Pins

儒卓力:
**IGBT 1200V 15A 1,85V TO-247 **