STGFW30H65FB

Trans IGBT Chip N-CH 650V 60A 58000mW 3Pin3+Tab TO-3pF Tube

The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 58000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.