Trans IGBT Chip N-CH 600V 120A 360000mW 3Pin3+Tab TO-247 Tube
You can use this IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 360000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STGW60H65F ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STGW60H65DRF 意法半导体 | 类似代替 | STGW60H65F和STGW60H65DRF的区别 |