STGWA80H65FB

IGBT 晶体管 Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

This IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.