STGFW80V60F

Trans IGBT Chip N-CH 600V 120A 79000mW 3Pin3+Tab TO-3pF Tube

This IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 79000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology.