STGW35NC120HD

35 A - 1200 V - 非常快速的IGBT 35 A - 1200 V - very fast IGBT

The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 220000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

得捷:
IGBT 1200V 60A 235W TO247

贸泽:
IGBT Transistors PowerMESH IGBT

艾睿:
The STGW35NC120HD IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 220000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 58A 3-Pin3+Tab TO-247

DeviceMart:
IGBT N-CH 35A 1200V TO-247