STGW80V60DF

600V,120A,IGBT带二极管

IGBT 分立，STMicroelectronics

立创商城:
STGW80V60DF

得捷:
IGBT 600V 120A 469W TO247

欧时:
STMicroelectronics STGW80V60DF N沟道 IGBT, Vce=600 V, 120 A, 3引脚 TO-247封装

贸泽:
IGBT 晶体管 Trench gate V series 600V 80A HiSpd

艾睿:
This STGW80V60DF IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.

安富利:
Trans IGBT Chip N-CH 600V 120A 3-Pin TO-247 Tube

Chip1Stop:
Trans IGBT Chip N-CH 600V 120A 3-Pin3+Tab TO-247 Tube

Verical:
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin3+Tab TO-247 Tube

力源芯城:
600V,120A,IGBT带二极管