STGWT80V60DF

STMICROELECTRONICS  STGWT80V60DF  单晶体管, IGBT, 120 A, 1.85 V, 469 W, 600 V, TO-3P, 3 引脚 新

Minimize the current at your gate with the IGBT transistor from STMicroelectronics. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.