STGW50HF60SD

STMICROELECTRONICS  STGW50HF60SD  单晶体管, IGBT, 110 A, 600 V, 284 W, 600 V, TO-247, 3 引脚

IGBT 分立，STMicroelectronics

得捷:
IGBT 600V 110A 284W TO247

欧时:
STMicroelectronics IGBT, STGW50HF60SD, 3引脚, TO-247封装, Vce=600 V, 110 A, ±20V

贸泽:
IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces

e络盟:
# STMICROELECTRONICS  STGW50HF60SD  单晶体管, IGBT, 110 A, 600 V, 284 W, 600 V, TO-247, 3 引脚

艾睿:
Don&s;t be afraid to step up the amps in your device when using this STGW50HF60SD IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 284000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans IGBT Chip N-CH 600V 110A 3-Pin3+Tab TO-247 Tube

Chip1Stop:
Trans IGBT Chip N-CH 600V 110A 3-Pin3+Tab TO-247 Tube

Newark:
IGBT Single Transistor, 110 A, 600 V, 284 W, 600 V, TO-247, 3 Pins

DeviceMart:
IGBT 600V 60A TO-247

Win Source:
IGBT 600V 110A 284W TO247