STGDL6NC60DT4

N沟道600V - 6A - DPAK / D2PAK / TO- 220 / TO- 220FP超快速IGBT N-channel 600V - 6A - DPAK / D2PAK / TO-220 / TO-220FP Hyper fast IGBT

IGBT - 表面贴装型 DPAK

得捷:
IGBT 600V 13A 50W DPAK

艾睿:
The STGDL6NC60DT4 IGBT transistor from STMicroelectronics will work effectively even with higher currents. Its maximum power dissipation is 50000 mW. It has a maximum collector emitter voltage of 600 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans IGBT Chip N-CH 600V 13A 3-Pin2+Tab DPAK T/R