STGW50NC60W

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STGW50NC60W概述

Trans IGBT Chip N-CH 600V 100A 285000mW 3Pin3+Tab TO-247 Tube

IGBT - 600 V 100 A 285 W 通孔 TO-247 长引线


得捷:
IGBT 600V 100A 285W TO247


贸泽:
IGBT Transistors Ultra fast series


艾睿:
This STGW50NC60W IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 285000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.


Chip1Stop:
Trans IGBT Chip N-CH 600V 100A 3-Pin3+Tab TO-247 Tube


DeviceMart:
IGBT N-CH 600V 55A TO-247


Win Source:
IGBT 600V 100A 285W TO247


STGW50NC60W中文资料参数规格
技术参数

耗散功率 285000 mW

击穿电压集电极-发射极 600 V

额定功率Max 285 W

工作温度Max 150 ℃

工作温度Min 55 ℃

耗散功率Max 285000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

长度 15.75 mm

宽度 5.15 mm

高度 20.15 mm

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买STGW50NC60W
型号: STGW50NC60W
描述:Trans IGBT Chip N-CH 600V 100A 285000mW 3Pin3+Tab TO-247 Tube

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