








Trans IGBT Chip N-CH 600V 100A 285000mW 3Pin3+Tab TO-247 Tube
IGBT - 600 V 100 A 285 W 通孔 TO-247 长引线
得捷:
IGBT 600V 100A 285W TO247
贸泽:
IGBT Transistors Ultra fast series
艾睿:
This STGW50NC60W IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 285000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans IGBT Chip N-CH 600V 100A 3-Pin3+Tab TO-247 Tube
DeviceMart:
IGBT N-CH 600V 55A TO-247
Win Source:
IGBT 600V 100A 285W TO247
耗散功率 285000 mW
击穿电压集电极-发射极 600 V
额定功率Max 285 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 285000 mW
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.75 mm
宽度 5.15 mm
高度 20.15 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99