STGF14NC60KD

STMICROELECTRONICS  STGF14NC60KD  单晶体管, IGBT, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 引脚

IGBT 分立，STMicroelectronics

### IGBT 分立件和模块，STMicroelectronics

绝缘栅级双极性或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

得捷:
IGBT 600V 11A 28W TO220FP

欧时:
STMicroelectronics STGF14NC60KD N沟道 IGBT, 11 A, Vce=600 V, 1MHz, 3引脚 TO-220FP封装

立创商城:
28W 600V 11A

贸泽:
IGBT 晶体管 PowerMESH" IGBT

艾睿:
This fast-switching STGF14NC60KD IGBT transistor from STMicroelectronics will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 28000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans IGBT Chip N-CH 600V 11A 3-Pin3+Tab TO-220FP Tube

Chip1Stop:
Trans IGBT Chip N-CH 600V 11A 3-Pin3+Tab TO-220FP Tube

TME:
Transistor: IGBT; 600V; 7A; 28W; TO220FP

Verical:
Trans IGBT Chip N-CH 600V 11A 28000mW 3-Pin3+Tab TO-220FP Tube

Newark:
# STMICROELECTRONICS  STGF14NC60KD  IGBT Single Transistor, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 Pins

儒卓力:
**IGBT SCRtech 600V 14A TO-220FP **

力源芯城:
11A,600V,IGBT

DeviceMart:
IGBT N-CH 600V 11A TO-220FP

Win Source:
IGBT 600V 11A 28W TO220FP