STGB3NC120HD 系列 1200 V 7 A 极快速 IGBT 带超快恢复二极管 - D2PAK
This IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1200 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
针脚数 3
耗散功率 75 W
输入电容 470 pF
击穿电压集电极-发射极 1200 V
热阻 62.5 ℃/W
反向恢复时间 51 ns
额定功率Max 75 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 75000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99