STGP8NC60KD

STGP8NC60K 系列 N 沟道 600V 8 A 额定短路电流 PowerMESH IGBT - TO-220

IGBT - 600 V 15 A 65 W 通孔 TO-220AB

欧时:
STMicroelectronics, STGP8NC60KD

立创商城:
STGP8NC60KD

得捷:
IGBT 600V 15A 65W TO220

艾睿:
This powerful and secure STGP8NC60KD IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 65000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

Chip1Stop:
Trans IGBT Chip N-CH 600V 7A 3-Pin3+Tab TO-220 Tube

Verical:
Trans IGBT Chip N-CH 600V 7A 65000mW 3-Pin3+Tab TO-220AB Tube

儒卓力:
**IGBT 600V 8A 2.2V TO220-3 R **

DeviceMart:
IGBT N-CH 8A 600V TO-220

Win Source:
IGBT 600V 15A 65W TO220