STGW19NC60WD

STMICROELECTRONICS  STGW19NC60WD  单晶体管, IGBT, 42 A, 2.5 V, 125 W, 600 V, TO-247, 3 引脚

IGBT 分立，STMicroelectronics

得捷:
IGBT 600V 42A 125W TO247

欧时:
STMicroelectronics IGBT, STGW19NC60WD, 3引脚, TO-247封装, Vce=600 V, 23 A, ±20V

贸泽:
IGBT 晶体管 N Ch 600V 19A

e络盟:
STMICROELECTRONICS  STGW19NC60WD  单晶体管, IGBT, 42 A, 2.5 V, 125 W, 600 V, TO-247, 3 引脚

艾睿:
Use the STGW19NC60WD IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 125000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans IGBT Chip N-CH 600V 42A 3-Pin3+Tab TO-247

富昌:
STGW19NC60WD Series 600 V 23 A N-Channel Ultra Fast PowerMESH IGBT - TO-247

Chip1Stop:
Trans IGBT Chip N-CH 600V 42A 3-Pin3+Tab TO-247

DeviceMart:
IGBT N-CH 23A 600V TO-247