STGP19NC60KD 系列 N沟道 600 V 22 A 超快 PowerMESH IGBT - TO-220
Use the IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 125000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
耗散功率 125000 mW
输入电容 1170 pF
击穿电压集电极-发射极 600 V
热阻 62.5 ℃/W
反向恢复时间 31 ns
额定功率Max 125 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
宽度 4.6 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STGP19NC60KD ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IRGB4061DPBF 国际整流器 | 功能相似 | STGP19NC60KD和IRGB4061DPBF的区别 |