N沟道600V - 19A - TO- 220 - TO- 247超高速IGBT PowerMESH⑩ N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH⑩ IGBT
You won"t need to worry about any lagging in your circuit with this IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
极性 N-Channel
耗散功率 125000 mW
上升时间 7.00 ns
击穿电压集电极-发射极 600 V
反向恢复时间 31 ns
额定功率Max 125 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 9.15 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STGP19NC60WD ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STGP19NC60HD 意法半导体 | 类似代替 | STGP19NC60WD和STGP19NC60HD的区别 |
146285-2 泰科 | 功能相似 | STGP19NC60WD和146285-2的区别 |