N沟道10A - 600V - TO- 220低压降的PowerMESH TM IGBT N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency application <1kHz.
General features
■ HIGH CURRENT CAPABILITY
■ HIGH INPUT IMPEDANCE VOLTAGE DRIVEN
Applications
■ LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR CONTROL
额定电压DC 600 V
额定电流 20.0 A
极性 N-Channel
耗散功率 80000 mW
漏源击穿电压 600 V
连续漏极电流Ids 10.0 A
上升时间 460 ns
击穿电压集电极-发射极 600 V
反向恢复时间 37 ns
额定功率Max 80 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 80000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99