STGB19NC60KDT4

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STGB19NC60KDT4概述

20 A - 600 V - 短路崎岖IGBT 20 A - 600 V - short circuit rugged IGBT

IGBT - 600 V 35 A 125 W 表面贴装型 D2PAK


立创商城:
STGB19NC60KDT4


得捷:
IGBT 600V 35A 125W D2PAK


艾睿:
Use the STGB19NC60KDT4 IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 125000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans IGBT Chip N-CH 600V 35A 3-Pin2+Tab D2PAK T/R


Chip1Stop:
Trans IGBT Chip N-CH 600V 35A 3-Pin2+Tab D2PAK T/R


Win Source:
IGBT 600V 35A 125W D2PAK


STGB19NC60KDT4中文资料参数规格
技术参数

耗散功率 125000 mW

击穿电压集电极-发射极 600 V

反向恢复时间 31 ns

额定功率Max 125 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 125000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

封装 TO-263-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买STGB19NC60KDT4
型号: STGB19NC60KDT4
描述:20 A - 600 V - 短路崎岖IGBT 20 A - 600 V - short circuit rugged IGBT

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