STGD14NC60K 系列 N沟道 600 V 14 A 短路 PowerMESH IGBT - TO-252-3
This IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 80000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
额定电压DC 600 V
额定电流 14.0 A
耗散功率 80000 mW
栅电荷 34.4 nC
漏源极电压Vds 600 V
连续漏极电流Ids 14.0 A
击穿电压集电极-发射极 600 V
额定功率Max 80 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 80000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99