STGW80H65FB

Trans IGBT Chip N-CH 650V 120A 469000mW 3Pin3+Tab TO-247 Tube

You can use this IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.