600 V - 10 A - 非常快速的IGBT 600 V - 10 A - very fast IGBT
The IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 65000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
耗散功率 65000 mW
击穿电压集电极-发射极 600 V
反向恢复时间 22 ns
额定功率Max 62 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 62000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STGD10NC60HDT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STGD10NC60KDT4 意法半导体 | 类似代替 | STGD10NC60HDT4和STGD10NC60KDT4的区别 |