STGB10H60DF

IGBT 分立，STMicroelectronics### IGBT 分立件和模块，STMicroelectronics绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

IGBT 分立，STMicroelectronics

得捷:
IGBT 600V 20A 115W D2PAK

欧时:
STMicroelectronics STGB10H60DF N沟道 IGBT, Vce=600 V, 20 A, 3引脚 D2PAK TO-263封装

艾睿:
This STGB10H60DF IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 115000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology.

安富利:
Trans IGBT Chip N-CH 600V 20A 3-Pin D2PAK T/R

Chip1Stop:
Trans IGBT Chip N-CH 600V 20A 3-Pin2+Tab D2PAK T/R

Verical:
Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin2+Tab D2PAK T/R

儒卓力:
**IGBT 600V 10A 1,7V D2PAK **