STGW40H120 系列 1200 V 40 A 高速 沟槽栅场截止 IGBT - TO-247
IGBT 沟槽型场截止 1200 V 80 A 468 W 通孔 TO-247
立创商城:
STGW40H120DF2
得捷:
IGBT 1200V 40A HS TO-247
贸泽:
IGBT 晶体管 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
e络盟:
单晶体管, IGBT, 80 A, 2.1 V, 468 W, 1.2 kV, TO-247, 3 引脚
艾睿:
Minimize the current at your gate with the STGW40H120DF2 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 468000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
安富利:
Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube
Chip1Stop:
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin3+Tab TO-247 Tube
Verical:
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin3+Tab TO-247 Tube
儒卓力:
**IGBT 1200V 80A 2.1V TO247-3 **