STGW40S120DF3

STMICROELECTRONICS  STGW40S120DF3  晶体管, IGBT, TO247

IGBT 分立，STMicroelectronics

得捷:
IGBT 1200V 40A TO247

欧时:
STMicroelectronics STGW40S120DF3 N沟道 IGBT, 80 A, Vce=1200 V, 3引脚 TO-247封装

e络盟:
单晶体管, IGBT, 80 A, 1.65 V, 468 W, 1.2 kV, TO-247, 3 引脚

艾睿:
This STGW40S120DF3 IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 468000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin TO-247 Tube

Verical:
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin3+Tab TO-247 Tube